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SUD50P08-26
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = - 250 μA
I D = - 250 μA
- 80
- 80
7.5
V
mV/°C
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
V GS(th)
I GSS
I DSS
V DS = V GS , I D = - 250 μA
V DS = 0 V, V GS = ± 20 V
V DS = - 80 V, V GS = 0 V
V DS = - 80 V, V GS = 0 V, T J = 55 °C
-2
-3
-4
± 100
-1
- 10
V
nA
μA
On-State Drain Current a
I D(on)
V DS ≥ 5 V, V GS = - 10 V
A
Drain-Source On-State
Resistance a
r DS(on)
V GS = - 10 V, I D = - 12.9 A
0.022
0.026
Ω
Forward Transconductance a
g fs
V DS = - 15 V, I D = - 12.9 A
39
S
Dynamic b
Input Capacitance
C iss
5160
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
C oss
C rss
Q g
Q gs
Q gd
R g
t d(on)
V DS = - 40 V, V GS = 0 V, f = 1 MHz
V DS = - 40 V, V GS = - 10 V, I D = - 12.9 A
f = 1 MHz
320
220
102
22
29
4
15
155
25
pF
nC
Ω
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = - 40 V, R L = 3.7 Ω
I D ? - 10.8 A, V GEN = - 10 V, R g = 1 Ω
50
90
65
75
135
100
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current a
I S
I SM
T C = 25 °C
- 50
- 60
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = - 10.8 A
I F = - 10.8 A, di/dt = 100 A/μs, T J = 25 °C
- 0.8
60
150
45
15
- 1.2
90
235
V
ns
nC
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
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Document Number: 73442
S-71661-Rev. B, 06-Aug-07
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